Forming Porous Structures on Silicon with a Ferroelectric for Capacitive Microelectronic and Microsystems Engineering Elements

Semenova, O. V.; Railko, M. Yu.; Patrusheva, T. N.; Merkushev, F. F.; Podorozhyak, S. A.; Yuzova, V. A.; Korets, A. Ya.; Khol’Kin, A. I.

doi:10.1134/S0040579518050238

Author:

Semenova, O. V.

Railko, M. Yu.

Patrusheva, T. N.

Merkushev, F. F.

Podorozhyak, S. A.

Yuzova, V. A.

Korets, A. Ya.

Khol’Kin, A. I.

Corporate Contributor:

Институт инженерной физики и радиоэлектроники

Кафедра физики

Кафедра приборостроения и наноэлектроники

Date:

2018

Journal Name:

Theoretical Foundations of Chemical Engineering

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Bibliographic Citation:

Semenova, O. V. Forming Porous Structures on Silicon with a Ferroelectric for Capacitive Microelectronic and Microsystems Engineering Elements [Текст] / O. V. Semenova, M. Yu. Railko, T. N. Patrusheva, F. F. Merkushev, S. A. Podorozhyak, V. A. Yuzova, A. Ya. Korets, A. I. Khol’Kin // Theoretical Foundations of Chemical Engineering. — 2018. — Vol. 52 (No. 5). — С. 886-891

Текст статьи не публикуется в открытом доступе в соответствии с политикой журнала.

Abstract:

The formation of heterostructures based on porous silicon with barium titanate for application in capacitive electronic and microsystem engineering elements has been experimentally investigated. The dependences of the capacitance and permittivity on the porous matrix dimensions, number of deposited barium titanate layers, and material of capacitor structure plates has been analyzed.

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