Application of Thin Piezoelectric Films in DiamondBased Acoustoelectronic Devices

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DOI:
10.5772/intechopen.76715
URI (для ссылок/цитирований):
https://www.intechopen.com/books/piezoelectricity-organic-and-inorganic-materials-and-applications/application-of-thin-piezoelectric-films-in-diamond-based-acoustoelectronic-devices
https://elib.sfu-kras.ru/handle/2311/111053
Автор:
Boris P. Sorokin
Gennady M. Kvashnin
Andrey S. Novoselov
Sergey I. Burkov
Anton B. Shipilov
Nikolay V. Luparev
Victor V. Aksenenkov
Vladimir D. Blank
Коллективный автор:
Институт инженерной физики и радиоэлектроники
Базовая кафедра физики твердого тела и нанотехнологий
Дата:
2018-08
Журнал:
InTech
Квартиль журнала в Scopus:
Q4
Библиографическое описание:
Boris P. Sorokin. Application of Thin Piezoelectric Films in DiamondBased Acoustoelectronic Devices [Текст] / Boris P. Sorokin, Gennady M. Kvashnin, Andrey S. Novoselov, Sergey I. Burkov, Anton B. Shipilov, Nikolay V. Luparev, Victor V. Aksenenkov, Vladimir D. Blank // InTech: Organic and Inorganic Materials and Applications. — 2018. — С. 15-41

Текст статьи не публикуется в открытом доступе в соответствии с политикой журнала.
Аннотация:
The theory of external loading influence on acoustic parameters of piezoelectric fivelayered structure as “Al/(001) AlN/Mo/(001) diamond/Me” has been developed. Oscillations in diamond-based high-overtone bulk acoustic resonators (HBARs) have been investigated in terms of 3D FEM simulation. Peculiarities of technology of aluminum-scandium nitride (ASN) films have been discussed. Composition Al0.8Sc0.2N was obtained to create the diamond-based HBAR and SAWresonator. Application of ASN films has resulted in a drastic increasing an electromechanical coupling up to 2.5 times in comparison with aluminum nitride
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