Excitation of hypersonic acoustic waves in diamond-based piezoelectric layered structure on the microwave frequencies up to 20 GHz
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URI (для ссылок/цитирований):
http://www.sciencedirect.com/science/article/pii/S0041624X16303651https://elib.sfu-kras.ru/handle/2311/69938
Автор:
Sorokin, B. P.
Kvashnin, G. M.
Novoselov, A. S.
Bormashov, V. S.
Golovanov, A. V.
Burkov, S. I.
Blank, V. D.
Коллективный автор:
Институт инженерной физики и радиоэлектроники
Базовая кафедра физики твердого тела и нанотехнологий
Дата:
2017-07Журнал:
UltrasonicsКвартиль журнала в Scopus:
Q1Квартиль журнала в Web of Science:
Q2Библиографическое описание:
Sorokin, B. P. Excitation of hypersonic acoustic waves in diamond-based piezoelectric layered structure on the microwave frequencies up to 20 GHz [Текст] / B. P. Sorokin, G. M. Kvashnin, A. S. Novoselov, V. S. Bormashov, A. V. Golovanov, S. I. Burkov, V. D. Blank // Ultrasonics. — 2017. — Т. 78. — С. 162-165Текст статьи не публикуется в открытом доступе в соответствии с политикой журнала.
Аннотация:
First ultrahigh frequency (UHF) investigation of quality factor Q for the piezoelectric layered structure
«Al/(001)AlN/Mo/(100) diamond» has been executed in a broad frequency band from 1 up to 20 GHz.
The record-breaking Q f quality parameter up to 2.7 1014 Hz has been obtained close to 20 GHz.
Frequency dependence of the form factor m correlated with quality factor has been analyzed by means
of computer simulation, and non-monotonic frequency dependence can be explained by proper features
of thin-film piezoelectric transducer (TFPT). Excluding the minimal Q magnitudes measured at the frequency
points associated with minimal TFPT effectiveness, one can prove a rule of Qf f observed for diamond
on the frequencies above 1 GHz and defined by Landau-Rumer’s acoustic attenuation mechanism.
Synthetic IIa-type diamond single crystal as a substrate material for High-overtone Bulk Acoustic
Resonator (HBAR) possesses some excellent acoustic properties in a wide microwave band and can be
successfully applied for design of acoustoelectronic devices, especially the ones operating at a far UHF
band.