The role of the semiconductor layer in the exchange-bias film structure of CoNi / Si / FeNi / Si with a spin spring effect
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URI (для ссылок/цитирований):
https://iopscience.iop.org/article/10.1088/1742-6596/1389/1/012028https://elib.sfu-kras.ru/handle/2311/143227
Автор:
A, V Kobyakov
I, A Turpanov
G, S Patrin
V, I Yushkov
S, A Yarikov
M, N Volochaev
Ya, A Zhivaya
Коллективный автор:
Институт инженерной физики и радиоэлектроники
Кафедра общей физики
Дата:
2019-11Журнал:
Journal of Physics: Conference SeriesКвартиль журнала в Scopus:
Q3Библиографическое описание:
A, V Kobyakov. The role of the semiconductor layer in the exchange-bias film structure of CoNi / Si / FeNi / Si with a spin spring effect [Текст] / V Kobyakov A, A Turpanov I, S Patrin G, I Yushkov V, A Yarikov S, N Volochaev M, A Zhivaya Ya // Journal of Physics: Conference Series. — 2019. — Т. 1389. — С. 012028Аннотация:
CoNi / Si / FeNi / Si structures were synthesized by ion-plasma sputtering. A negative hysteresis loop bias was detected at the thickness of the silicon layer was less than 2 nm and the temperature was less than 100 K. A positive hysteresis loop bias was detected at the thickness of the silicon layer was more than 2 nm and the temperature greater than 100K.