Application features of MOSFET spice models in design of radio-electronic equipment
URI (for links/citations):
http://ieeexplore.ieee.org/document/7998519/?deniedhttps://elib.sfu-kras.ru/handle/2311/110752
Author:
Сидарас, Антон Альбертасович
Носкова, Елена Евгеньевна
Капулин, Денис Владимирович
Corporate Contributor:
Институт космических и информационных технологий
Кафедра прикладной математики и компьютерной безопасности
Date:
2017Journal Name:
2017 INTERNATIONAL SIBERIAN CONFERENCE ON CONTROL AND COMMUNICATIONS (SIBCON) PROCEEDINGSJournal Quartile in Scopus:
без квартиляJournal Quartile in Web of Science:
без квартиляBibliographic Citation:
Сидарас, Антон Альбертасович. Application features of MOSFET spice models in design of radio-electronic equipment [Текст] / Антон Альбертасович Сидарас, Елена Евгеньевна Носкова, Денис Владимирович Капулин // 2017 INTERNATIONAL SIBERIAN CONFERENCE ON CONTROL AND COMMUNICATIONS (SIBCON) PROCEEDINGS. — 2017. — С. 444-449Текст статьи не публикуется в открытом доступе в соответствии с политикой журнала.
Abstract:
Using the modern elements in a radio-electronic equipment requires close attention to processes as in branch of design and production of electronic components to use the last development in the field simulation of components and in the field computer-aided design of an equipment on the basis of radio-electronic components for the purpose of support adequacy, accuracy and convergence. Possibilities of a solution simulation adequacies of a radio-electronic equipment on the basis of Spice models of electronic components as analysis result and applications of calculation equations of global model parameters are shown. On the example of use the MOSFET models of different generations the inadequacy reasons of simulation results the transfer characteristic for the matched inverter are shown. Ways for fixing inadequacy calculations through establishment of models parameter values other than values by default are offered. Values Spice directive OPTIONS for support of accuracy and stability in simulation on the basis of the used MOSFET models of different generations are offered.