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Semenova, O. V.
Railko, M. Yu.
Patrusheva, T. N.
Merkushev, F. F.
Podorozhyak, S. A.
Yuzova, V. A.
Korets, A. Ya.
Khol’Kin, A. I.
2019-07-01T07:26:01Z
2019-07-01T07:26:01Z
2018
Semenova, O. V. Forming Porous Structures on Silicon with a Ferroelectric for Capacitive Microelectronic and Microsystems Engineering Elements [Текст] / O. V. Semenova, M. Yu. Railko, T. N. Patrusheva, F. F. Merkushev, S. A. Podorozhyak, V. A. Yuzova, A. Ya. Korets, A. I. Khol’Kin // Theoretical Foundations of Chemical Engineering. — 2018. — Vol. 52 (No. 5). — С. 886-891
00405795
http://www.maik.ru/cgi-bin/journal.pl?name=tfce&page=main
http://elib.sfu-kras.ru/handle/2311/110679
Текст статьи не публикуется в открытом доступе в соответствии с политикой журнала.
The formation of heterostructures based on porous silicon with barium titanate for application in capacitive electronic and microsystem engineering elements has been experimentally investigated. The dependences of the capacitance and permittivity on the porous matrix dimensions, number of deposited barium titanate layers, and material of capacitor structure plates has been analyzed.
porous structures on silicon
electrochemical treatment
ferroelectric
extraction–pyrolytic
method
heterostructures on porous silicon with barium titanate
Forming Porous Structures on Silicon with a Ferroelectric for Capacitive Microelectronic and Microsystems Engineering Elements
Journal Article
Journal Article Preprint
886-891
61.13
2019-07-01T07:26:01Z
10.1134/S0040579518050238
Институт инженерной физики и радиоэлектроники
Кафедра физики
Кафедра приборостроения и наноэлектроники
Theoretical Foundations of Chemical Engineering
Q3
Q4


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