Показать сокращенную информацию
The role of the semiconductor layer in the exchange-bias film structure of CoNi / Si / FeNi / Si with a spin spring effect
Автор | A, V Kobyakov | |
Автор | I, A Turpanov | |
Автор | G, S Patrin | |
Автор | V, I Yushkov | |
Автор | S, A Yarikov | |
Автор | M, N Volochaev | |
Автор | Ya, A Zhivaya | |
Дата внесения | 2021-08-13T09:35:25Z | |
Дата, когда ресурс стал доступен | 2021-08-13T09:35:25Z | |
Дата публикации | 2019-11 | |
Библиографическое описание | A, V Kobyakov. The role of the semiconductor layer in the exchange-bias film structure of CoNi / Si / FeNi / Si with a spin spring effect [Текст] / V Kobyakov A, A Turpanov I, S Patrin G, I Yushkov V, A Yarikov S, N Volochaev M, A Zhivaya Ya // Journal of Physics: Conference Series. — 2019. — Т. 1389. — С. 012028 | |
ISSN | 17426588 | |
URI (для ссылок/цитирований) | https://iopscience.iop.org/article/10.1088/1742-6596/1389/1/012028 | |
URI (для ссылок/цитирований) | https://elib.sfu-kras.ru/handle/2311/143227 | |
Аннотация | CoNi / Si / FeNi / Si structures were synthesized by ion-plasma sputtering. A negative hysteresis loop bias was detected at the thickness of the silicon layer was less than 2 nm and the temperature was less than 100 K. A positive hysteresis loop bias was detected at the thickness of the silicon layer was more than 2 nm and the temperature greater than 100K. | |
Название | The role of the semiconductor layer in the exchange-bias film structure of CoNi / Si / FeNi / Si with a spin spring effect | |
Тип | Journal Article | |
Тип | Journal Article Preprint | |
Страницы | 012028 | |
Дата обновления | 2021-08-13T09:35:25Z | |
DOI | 10.1088/1742-6596/1389/1/012028 | |
Институт | Институт инженерной физики и радиоэлектроники | |
Подразделение | Кафедра общей физики | |
Журнал | Journal of Physics: Conference Series | |
Квартиль журнала в Scopus | Q3 |