Bi2O2SO4, a new representative of the grandreefite structure type
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URI (для ссылок/цитирований):
https://www.sciencedirect.com/science/article/pii/S0022459619306292https://elib.sfu-kras.ru/handle/2311/142966
Автор:
Charkin, D. O.
Akimov, G. A.
Plokhikh, I. V.
Zaloga, A. N.
Borisov, A. S.
Stefanovich, S. Yu.
Kuznetsov, A. N.
Siidra, O. I.
Коллективный автор:
Институт цветных металлов и материаловедения
Кафедра композиционных материалов и физико-химии металлургических процессов
Дата:
2020-02Журнал:
Journal of Solid State ChemistryКвартиль журнала в Scopus:
Q2Квартиль журнала в Web of Science:
Q2Библиографическое описание:
Charkin, D. O. Bi2O2SO4, a new representative of the grandreefite structure type [Текст] / D. O. Charkin, G. A. Akimov, I. V. Plokhikh, A. N. Zaloga, A. S. Borisov, S. Yu. Stefanovich, A. N. Kuznetsov, O. I. Siidra // Journal of Solid State Chemistry. — 2020. — Т. 282. — С. 1-8Текст статьи не публикуется в открытом доступе в соответствии с политикой журнала.
Аннотация:
Single-phase polycrystalline bismuth oxysulfate, Bi2O2SO4, has been prepared via low-temperature reaction between Bi2O2CO3 and (NH4)2SO4. The compound is monoclinic (C2/m, a = 14.1659(4) Å, b = 4.2344(1) Å, c = 8.2100(2) Å, β = 106.7201(8)°, V = 471.65(2) Å3) and isostructural to isoelectronic Pb2F2SO4 and to isolobal Ln2O2SO4. Upon heating, it decomposes at ~550 °C into the Bi28O32(SO4)10 which is stable until ~775 °C. DFT calculations predict it to be a wide-gap semiconductor.
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