Synthesis of FET based full-Heusler alloy thin films formed by rapid thermal annealing and transport properties=Synthesis and transport properties of FET based on Heusler alloy thin films formed by rapid thermal annealing

Lukyanenko, A. V.; Tarasov, A. S.; Shanidze, L. V.; Yakovlev, I. A.; Baron, F. A.; Volkov, N. V.

doi:10.1088/1742-6596/1410/1/012017

Author:

Lukyanenko, A. V.

Tarasov, A. S.

Shanidze, L. V.

Yakovlev, I. A.

Baron, F. A.

Volkov, N. V.

Corporate Contributor:

Институт инженерной физики и радиоэлектроники

Базовая кафедра физики твердого тела и нанотехнологий

Date:

2019-12

Journal Name:

Journal of Physics: Conference Series

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Bibliographic Citation:

Lukyanenko, A. V. Synthesis of FET based full-Heusler alloy thin films formed by rapid thermal annealing and transport properties=Synthesis and transport properties of FET based on Heusler alloy thin films formed by rapid thermal annealing [Текст] / A. V. Lukyanenko, A. S. Tarasov, L. V. Shanidze, I. A. Yakovlev, F. A. Baron, N. V. Volkov // Journal of Physics: Conference Series. — 2019. — Т. 1410 (№ 1).

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