Magnetic-field-driven electron transport in ferromagnetic/ insulator/ semiconductor hybrid structures
Volkov, N. V.
Tarasov, A. S.
Rautskii, M. V.
Lukyanenko, A. V.
Varnakov, S. N.
Ovchinnikov, S. G.
Институт инженерной физики и радиоэлектроники
Базовая кафедра физики твердого тела и нанотехнологий
Journal Name:Journal of Magnetism and Magnetic Materials
Journal Quartile in Scopus:Q1
Journal Quartile in Web of Science:Q2
Bibliographic Citation:Volkov, N. V. Magnetic-field-driven electron transport in ferromagnetic/ insulator/ semiconductor hybrid structures [Текст] / N. V. Volkov, A. S. Tarasov, M. V. Rautskii, A. V. Lukyanenko, S. N. Varnakov, S. G. Ovchinnikov // Journal of Magnetism and Magnetic Materials. — 2017. — № 440. — С. 140-143
Extremely large magnetotransport phenomena were found in the simple devices fabricated on base of the Me/ SiO2/p-Si hybrid structures (where Me are Mn and Fe). These effects include gigantic magnetoimpedance (MI), dc magnetoresistance (MR) and the lateral magneto-photo-voltaic effect (LMPE). The MI and MR values exceed 106% in magnetic field about 0.2 T for Mn/SiO2/p-Si Schottky diode. LMPE observed in Fe/SiO2/p-Si lateral device reaches the value of 104% in a field of 1 T. We believe that in case with the Schottky diode MR and MI effects are originate from magnetic field influence on impact ionization process by two different ways. First, the trajectory of the electron is deflected by a magnetic field, which suppresses acquisition of kinetic energy and therefore impact ionization. Second, the magnetic field gives rise to shift of the acceptor energy levels in silicon to a higher energy. As a result, the activation energy for impact ionization significantly increases and consequently threshold voltage rises. Moreover, the second mechanism (acceptor level energy shifting in magnetic field) can be responsible for giant LMPE.