Application features of MOSFET spice models in design of radio-electronic equipment
URI (для ссылок/цитирований):
http://ieeexplore.ieee.org/document/7998519/https://elib.sfu-kras.ru/handle/2311/69667
Автор:
Сидарас, Антон Альбертасович
Носкова, Елена Евгеньевна
Капулин, Денис Владимирович
Коллективный автор:
Институт космических и информационных технологий
Базовая кафедра информационных технологий на радиоэлектронном производстве
Кафедра систем автоматики, автоматизированного управления и проектирования
Дата:
2017-08Журнал:
2017 International Siberian Conference on Control and Communications (SIBCON)Квартиль журнала в Scopus:
без квартиляКвартиль журнала в Web of Science:
без квартиляБиблиографическое описание:
Сидарас, Антон Альбертасович. Application features of MOSFET spice models in design of radio-electronic equipment [Текст] / Антон Альбертасович Сидарас, Елена Евгеньевна Носкова, Денис Владимирович Капулин // 2017 International Siberian Conference on Control and Communications (SIBCON): Control and Communications (SIBCON), 2017 International Siberian Conference on. — 2017. — С. 1-5Аннотация:
Using the modern elements in a radio-electronic equipment requires close attention to processes as in branch of design and production of electronic components to use the last development in the field simulation of components and in the field computer-aided design of an equipment on the basis of radio-electronic components for the purpose of support adequacy, accuracy and convergence. Possibilities of a solution simulation adequacies of a radio-electronic equipment on the basis of Spice models of electronic components as analysis result and applications of calculation equations of global model parameters are shown. On the example of use the MOSFET models of different generations the inadequacy reasons of simulation results the transfer characteristic for the matched inverter are shown. Ways for fixing inadequacy calculations through establishment of models parameter values other than values by default are offered. Values Spice directive OPTIONS for support of accuracy and stability in simulation on the basis of the used MOSFET models of different generations are offered.