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Podkopaev O.I
Artemyev, V. V.
Smirnov, A. D.
Mamedov, V. M.
Sid’Ko, A. P.
Kalaev, V. V.
Kravtsova, E. D.
Shimanskii, A. F.
2017-06-16T10:28:06Z
2017-06-16T10:28:06Z
2016-09
Podkopaev O.I. Multiphysical simulation analysis of the dislocation structure in germanium single crystals [Текст] / Podkopaev O.I, V. V. Artemyev, A. D. Smirnov, V. M. Mamedov, A. P. Sid’Ko, V. V. Kalaev, E. D. Kravtsova, A. F. Shimanskii // Technical Physics: Theoretical and mathematical physics. — 2016. — Т. 61 (№ 9). — С. 1286-1291
10637842
http://elib.sfu-kras.ru/handle/2311/33067
Текст статьи не публикуется в открытом доступе в соответствии с политикой журнала.
To grow high-quality germanium crystals is one of the most important problems of growth industry. The dislocation density is an important parameter of the quality of single crystals. The dislocation densities in germanium crystals 100 mm in diameter, which have various shapes of the side surface and are grown by the Czochralski technique, are experimentally measured. The crystal growth is numerically simulated using heat-transfer and hydrodynamics models and the Alexander–Haasen dislocation model in terms of the CGSim software package. A comparison of the experimental and calculated dislocation densities shows that the dislocation model can be applied to study lattice defects in germanium crystals and to improve their quality.
https://www.scopus.com/record/display.uri?eid=2-s2.0-84987903722&origin=resultslist&sort=plf-f&src=s&st1=Shimanskii&st2=&sid=45A
high-quality germanium
dislocation
Multiphysical simulation analysis of the dislocation structure in germanium single crystals
Journal Article
Published Journal Article
1286-1291
53.41.29
2017-06-16T10:28:06Z
10.1134/S1063784216090206
Институт цветных металлов и материаловедения
Кафедра композиционных материалов и физико-химии металлургических процессов
Technical Physics
Q3
Q4


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