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Reflective Power Limiter for X-band with HTSC switching element
Автор | Belyaev, B. A. | |
Автор | Govorun, I. V. | |
Автор | Leksikov, A. A. | |
Автор | Serzhantov, A. M. | |
Автор | Leksikov, An. A. | |
Дата внесения | 2016-11-11T08:50:42Z | |
Дата, когда ресурс стал доступен | 2016-11-11T08:50:42Z | |
Дата публикации | 2016-09 | |
Библиографическое описание | Belyaev, B. A. Reflective Power Limiter for X-band with HTSC switching element [Текст] / B. A. Belyaev, I. V. Govorun, A. A. Leksikov, A. M. Serzhantov, An. A. Leksikov // IEEE Transactions on Applied Superconductivity. — 2016. — Т. 26 (№ 6). — С. 1500506 | |
ISSN | 10518223 | |
URI (для ссылок/цитирований) | https://elib.sfu-kras.ru/handle/2311/27887 | |
Аннотация | his paper presents a new type of power limiter (PL), using superconducting – to – normal state phase transition in HTSC. The presented device differs from the existing ones mainly in the reflective principle of its operation. In fact the PL is a three-resonator microstrip filter, whose resonators are configured and arranged in such a manner that coupling coefficient between the outer resonators equals zero, and the inner one has a gap in the middle section shunted by a HTS film element. In small signal mode, the HTS element is in low-loss state, and the device is essentially a three-pole filter with low transmission loss. When the level of the signal exceeds the threshold, HTS element transits to the high-loss state, and Q-factor of the inner resonator falls, breaking the coupling in the structure. This leads to the corresponding increase in PL’s transmission loss due to reflection. The more the level of incoming power, the more does the Q-factor fall. The PL operating frequency is 8 GHz with 8.5% fractional bandwidth. It remains operable up to 40 W of input power, providing 38 dB limitation. | |
Ссылка на другой сайт | http://ieeexplore.ieee.org/document/7407639/ | |
Тема | power limiter | |
Тема | microwave | |
Тема | transmission zero | |
Тема | microstrip structure | |
Название | Reflective Power Limiter for X-band with HTSC switching element | |
Тип | Journal Article | |
Тип | Journal Article Postprint | |
Страницы | 1500506 | |
ГРНТИ | 29.35.23 | |
Дата обновления | 2016-11-11T08:50:42Z | |
DOI | 10.1109/TASC.2016.2530700 | |
Институт | Институт инженерной физики и радиоэлектроники | |
Подразделение | Научно-исследовательская часть | |
Подразделение | Кафедра радиотехники | |
Журнал | IEEE Transactions on Applied Superconductivity | |
Квартиль журнала в Scopus | Q2 | |
Квартиль журнала в Web of Science | Q3 |